Infineon Technologies
IPD30N06S2L-23
- Condition:
- New
- Availability:
- In Stock / Can Dispatch Immediately
Description
Description
Condition : New
Pack of 9Pcs
Manufacturer : INFINEON TECHNOLOGIES
P/N : IPD30N06S2L-23
Date Code : 1251
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: DPAK-3 (TO-252-3)
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 30 A
Rds On - Drain-Source Resistance: 15.9 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Qg - Gate Charge: 42 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 100 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 9 ns
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Rise Time: 22 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 33 ns
Typical Turn-On Delay Time: 7 ns
Width: 6.22 mm
Part # Aliases: SP000252168 IPD30N06S2L23ATMA1
Unit Weight: 330 mg