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Infineon Technologies

IPD30N06S2L-23

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  • IPD30N06S2L-23
  • IPD30N06S2L-23
1,44€ Inc. Taxes
1,20€ Ex. Taxes

Description

 

Description

Condition : New

Pack of 9Pcs

Manufacturer : INFINEON TECHNOLOGIES

P/N : IPD30N06S2L-23

Date Code : 1251

Product Category: MOSFET

Technology: Si

Mounting Style: SMD/SMT

Package/Case: DPAK-3 (TO-252-3)

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 55 V

Id - Continuous Drain Current: 30 A

Rds On - Drain-Source Resistance: 15.9 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V

Qg - Gate Charge: 42 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 100 W

Channel Mode: Enhancement

Configuration: Single

Fall Time: 9 ns

Height: 2.3 mm

Length: 6.5 mm

Product Type: MOSFET

Rise Time: 22 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 33 ns

Typical Turn-On Delay Time: 7 ns

Width: 6.22 mm

Part # Aliases: SP000252168 IPD30N06S2L23ATMA1

Unit Weight: 330 mg
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