Description
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Description
Condition : New
Date Code : 9414
Manufacturer : Harris Semiconductor
P/N : RFD8P05
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-251-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 50 V
Id - Continuous Drain Current: 8 A
Rds On - Drain-Source Resistance: 300 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 48 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 20 ns
Height: 6.3 mm
Length: 6.8 mm
Product Type: MOSFET
Rise Time: 30 ns
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 42 ns
Typical Turn-On Delay Time: 16 ns
Width: 2.5 mm
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