Description
Description : Bipolar Transistors - BJT 60V 6A NPN LO VCEsat TRANSISTOR
Condition : New
Date Code : 1016
Prod ID : PBSS4560PA,115
Manufacturer: NXP
Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Package/Case: DFN2020-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 6 V
Maximum DC Collector Current: 7 A
Pd - Power Dissipation: 2.1 W
Gain Bandwidth Product fT: 150 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
DC Current Gain hFE Max: 440
Height: 0.61 mm
Length: 2.1 mm
Technology: Si
Width: 2.1 mm
Brand: NXP
Continuous Collector Current: 6 A
DC Collector/Base Gain hFE Min: 70
Product Type: BJTs - Bipolar Transistors