Description
Description : MOSFET 30V 1 N-CH HEXFET 9mOhms 39nC
Condition : New
Prod ID : IRF7458PBF
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SO-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 14 A
Rds On - Drain-Source Resistance: 7 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 39 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 1.75 mm
Length: 4.9 mm
Transistor Type: 1 N-Channel
Type: Smps MOSFET
Width: 3.9 mm
Brand: Infineon
Forward Transconductance - Min: 26 S
Fall Time: 5 ns
Product Type: MOSFET
Rise Time: 4.6 ns