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Infineon Technologies

IPB180N04S3-02

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2,90€ Inc. Taxes
2,42€ Ex. Taxes
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Description

Description

Condition : New

Pack of 10Pcs

Manufacturer : INFINEON TECHNOLOGIES

P/N : IPB180N04S3-02

Date Code : 1122 and 1203

Product Category: MOSFET

Technology: Si

Mounting Style: SMD/SMT

Package/Case: TO-263-7

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 40 V

Id - Continuous Drain Current: 180 A

Rds On - Drain-Source Resistance: 1.6 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 300 W

Channel Mode: Enhancement

Qualification: AEC-Q101

Tradename: OptiMOS

Configuration: Single

Height: 4.4 mm

Length: 10 mm

Series: OptiMOS-T

Transistor Type: 1 N-Channel

Width: 9.25 mm

Brand: Infineon Technologies

Fall Time: 18 ns

Product Type: MOSFET

Rise Time: 19 ns

Factory Pack Quantity: 1000

Subcategory: MOSFETs

Typical Turn-Off Delay Time: 57 ns

Typical Turn-On Delay Time: 35 ns

Part # Aliases: IPB18N4S32XT SP000254821 IPB180N04S302ATMA1

Unit Weight: 1,600 g
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