Description
Description
Condition : New
Manufacturer : SIEMENS
P/N : BSS110
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-92-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 50 V
Id - Continuous Drain Current: 170 mA
Rds On - Drain-Source Resistance: 10 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 630 mW
Channel Mode: Enhancement
Configuration: Single
Height: 5.33 mm
Length: 5.2 mm
Product: MOSFET Small Signal
Transistor Type: 1 P-Channel
Width: 4.19 mm
Fall Time: 25 ns
Product Type: MOSFET
Rise Time: 25 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 10 ns
Typical Turn-On Delay Time: 12 ns
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