Description
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Description
Condition : New
Date Code : 2006
Manufacturer : MOTOROLA
P/N : 2N2905A
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package/Case: TO-39-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.6 V
Pd - Power Dissipation: 3 W
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 200 C
DC Current Gain hFE Max: 450 at - 1 mA, - 10 V
Height: 6.6 mm
Length: 9.4 mm
Technology: Si
Width: 9.4 mm
Continuous Collector Current: 600 mA
DC Collector/Base Gain hFE Min: 100 at - 1 mA, - 10 V
Product Type: BJTs - Bipolar Transistors