Description
Description
Condition : New
Pack of 425Pcs
Manufacturer : VISHAY
P/N : SI2312CDS-T1-GE3
Date Code : 21+
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 6 A
Rds On - Drain-Source Resistance: 31.8 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 8.8 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.1 W
Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 8 ns
Height: 1.45 mm
Length: 2.9 mm
Product Type: MOSFET
Rise Time: 17 ns
Series: SI2
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 8 ns
Width: 1.6 mm
