null G-WXZGBNDHZX
IXYS Integrated Circuits

IXFH12N100F

(No reviews yet) Write a Review
Availability:
Order Preparation Time 20Days
Minimum Purchase:
100 units
8,35€ Inc. Taxes
6,96€ Ex. Taxes

Description

Autres Prix : Si vous avez besoin de plus de quantités et bénéficier d'un meilleur tarif 

Contactez-Nous :  sales@fecomponents.com


Other Prices : If you need more quantities and get a better price 

Contact Us: sales@fecomponents.com


Description

Condition : New

Pack of 100Pcs

Manufacturer : IXYS

P/N : IXFH12N100F

Date Code : 2012

Product Category: MOSFET

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-247-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 1 kV

Id - Continuous Drain Current: 12 A

Rds On - Drain-Source Resistance: 1.05 Ohms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 5.5 V

Qg - Gate Charge: 77 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 300 W

Channel Mode: Enhancement

Brand: IXYS

Configuration: Single

Fall Time: 12 ns

Height: 21.46 mm

Length: 16.26 mm

Product Type: MOSFET

Rise Time: 9.8 ns

Series: HiPerFET

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 31 ns

Typical Turn-On Delay Time: 12 ns

Width: 5.3 mm

Unit Weight: 6 g
View AllClose