IXYS Integrated Circuits
IXFH12N100F
- Availability:
- Order Preparation Time 20Days
- Minimum Purchase:
- 100 units
Description
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Condition : New
Pack of 100Pcs
Manufacturer : IXYS
P/N : IXFH12N100F
Date Code : 2012
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 1 kV
Id - Continuous Drain Current: 12 A
Rds On - Drain-Source Resistance: 1.05 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 5.5 V
Qg - Gate Charge: 77 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 12 ns
Height: 21.46 mm
Length: 16.26 mm
Product Type: MOSFET
Rise Time: 9.8 ns
Series: HiPerFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 12 ns
Width: 5.3 mm
Unit Weight: 6 g