Description
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Description
Condition : New
Manufacturer : STMICROELECTRONICS
P/N : 2N2219A
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package/Case: TO-5-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 75 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 0.6 A
Pd - Power Dissipation: 800 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 175 C
Series: 2N2219
DC Current Gain hFE Max: 30
Height: 1.5 mm
Length: 9.4 mm
Technology: Si
Width: 9.4 mm
Brand: STMicroelectronics
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hFE Min: 40
Product Type: BJTs - Bipolar Transistors